ALFA RPAR AS194DE Matched NPN transistor pair (SOIC-8-EPAD)

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The ALFA RPAR AS194 is a junction isolated ultra well-matched monolithic NPN transistor pair with an order of magnitude improvement in matching over conventional transistor pairs.

Electrical characteristics of these devices such as drift versus initial offset voltage, noise, and the exponential relationship of base-emitter voltage to collector current closely approach those of a theoretical transistor. Extrinsic base and emitter resistances is very low, giving very low noise and operating over a wide current range.

Also available in a TO5-8 package.

To guarantee long term stability of matching parameters, internal clamp diodes have been added across the emitter-base junction of each transistor. These prevent degradation due to reverse biased emitter current, the most common cause of field failures in matched devices. The parasitic isolation junction formed by the diodes also clamps the substrate region to the most negative emitter to ensure complete isolation between devices.

We also have the more economical AS394 transistor pair with a bit less exact matching characteristics.

ParameterAS194* AS394
MinTypMaxMinTypMax
Current Gain
@ Ic=1mA
@ Ic=100µA
@ Ic=10µA
@ Ic=1µA

350
350
300

700
550
450
300

300
250
200

700
550
450
300
Current Gain Match0.5%2%0.5%4%
Emitter-Base Offset Voltage25µV100µV150µV
Change in E-B Offset Voltage
versus C-B Voltage
10µV25µV10µV50µV
Change in E-B Offset Voltage
versus Collector Current
5µV25µV5µV50µV
Collector-Base Leakage0.05nA0.3nA0.05nA0.5nA
*This device
See datasheet for full specifications.

Features

Package: SOIC-8-EPAD
ALFA RPAR AS194H in SOIC-8 Package


References

ALFA RPAR AS194DE Data Sheet
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